University of Wisconsin-Madison, Materials Science and Engineering

Laboratory of Prof. Chang-Beom Eom

Dissertation: “Atomic Structure Design in Iron Based Superconductors”

University of Wisconsin-Madison,Materials Science and Engineering

Laboratory of Prof. Chang-Beom Eom

Thesis: “Emergence of Superconductivity by Atomic Geometry and Symmetry Design”

Seoul National University, Materials Science and Engineering

Laboratory of Prof. Euijoon Yoon

Thesis: “InGaAs/InP Quantum Well Infrared Photodetector”

POSTECH, Department of Materials Science and Engineering

    Assistant Professor

• • Atomic-scale epitaxy and quantum materials laboratory (EQML)

Institute for Basic Science (IBS)

    Senior Research Fellow/POSTECH Campus Personnel

• • Center for Van der Waals Quantum Solids

10/2022 - Present

University of Chicago, Department of Chemistry

    Postdoctoral Research Scholar, Laboratory of Prof. Jiwoong Park

• • Synthesized transition metal dichalcogenide (TMD) monolayer films with wafer-scale homogeneity by metal-organic chemical vapor deposition (MOCVD)

• • Created 3D nano-structured films from monolayer inorganic materials for light manipulation and non-linear responses as optical metamaterials

• • Advanced the development of atomically thin lateral heterostructures with TEM imaging and photoluminescence spectroscopy

• • Developed freestanding nanomembrane techniques and nano-integration for generating hybrid 2D/3D systems towards electronics and optoelectronics

University of Wisconsin-Madison, Materials Science and Engineering    

    Graduate Student Researcher, Laboratory of Prof. Chang-Beom Eom                       

1. • Built and modified growth chambers including pulsed laser deposition (PLD) and molecular beam epitaxy (MBE) for the synthesis of quantum materials such as Fe-based superconductors, complex perovskite oxides, and topological materials with antiperovskite structure (Sr₃PbO)

2. • Designed and controlled atomic configurations at the heterointerfaces to explore low dimensional superconductivity via single-crystalline film growth and theoretical calculation in collaboration with Pennsylvania State University

3. • Evaluated interfacial phenomena by investigating the relation between crystal structures and physical properties on the atomic scale, and by synchrotron X-ray techniques in collaboration with Argonne National Laboratory

4. • Observed new, non-equilibrium quantum dynamics and their Coulomb coupling through interband interactions, discovered through intensive collaboration with THz pump-probe spectroscopy group at Ames Laboratory

Samsung Electronics Semiconductor R&D Center

    Research Scientist                                                                                      

• • Evaluated atomic layer deposition (ALD) and plasma oxidation for gate oxides in 3D cell transistors to improve endurance and data retention of memory devices

• • Developed RF-biased plasma doping in the W polycide gate of dynamic random-access memory (DRAM) for high speed and low power consumption

• • Introduced ALD-type monolayer doping and flash- & laser-type milli-second annealing processes for ultra-shallow junctions as a performance booster in logic devices e.g., 14 nm fin field-effect transistors (FinFET)

• • Published and granted 15 US patents

LG Chemical R&D Center

    Research Scientist                                                                                                   

• •Developed laser lift-off technique for GaN/InGaN multi-quantum well light emitting devices (LED) for enhancing light extraction efficiency and heat dissipation

• • Designed metal interconnection and optical lenses for improving side-emitting light extraction 

• • Conducted thin film deposition (MOCVD, PECVD, sputter) for LED device fabrication

• • Published and granted 6 US patents

Seoul National University, Materials Science and Engineering

    Graduate Student Researcher, Laboratory of Prof. Euijoon Yoon                                                          

• • Fabricated III-V optoelectronic devices: InP/InAs quantum well/dot photodetector

• • Synthesized quantum dots by MOCVD with in-situ optical monitoring system